![]() ![]() The sheet resistances increase with the temperature following a power law with the index of +2.58, while the specific contact resistivity decreases with the temperature. Please inquire.Abstract: A pre-ohmic micro-patterned recess process, is utilized to fabricate Ti/Al/Ti/TiN ohmic contact to an ultrathin-barrier (UTB) AlGaN/GaN heterostructure, featuring a significantly reduced ohmic contact resistivity of 0.56 Ω NTT-AT also provides process services (including MEMS device prototyping, and etching services) and material analysis services.ĭetailed specifications: click here to download a leaflet of InAlN/GaN HEMT (PDF:385KB)ĭependent on stock level, delivery may be delayed. We can also provide device manufacturing and material analysis. Larger quantity for mass production needsĪble to provide various kinds of substrateĮpitaxial growth on Si, SiC, Sapphire and GaN substrates is available.Ĩ inch GaN on Silicon is also available with the same quality as 6 inch cases on request.Ĭlick here to download a leaflet of AlGaN/GaN HEMT on 6 inch Si (PDF:82KB)Ĭlick here to download an inspection data (PDF:90KB) Very flexible to meet wide range of production volumes ![]() Low RF loss achieved by optimized interlayer growth techniques, andĬlean surface with minimal particles, leading to high device production yields. High breakdown voltage and low leakage current, acheived by our unique optimized buffer layer,Įxcellent two-dimensional electron gas(2DEG)properties, acheived by precise control of growth conditions, High epi-layer uniformity, achieved by precise controls of growth conditions, NTT-AT provides high-performance and high-quality GaN HEMT epitaxial wafers with: High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.ĭurable and reliable devices in harsh environments GaN devices can achieve very high power efficiency, which accordingly reduces their size and lower power consumption, consequently that of their final products.ĥG-related RF devices, such as power amplifier At the device level, GaN devices (such as GaN FET) exceed limitations of the conventional Si devices. Using gallium nitride (GaN) HEMT epiwafer brings various benefits for the next generation high frequency and high power devices. Structure targeting higher mobility available. Update: New standard HEMT structure for Power application (on 6 inch Si) ![]()
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